vishay siliconix SIA912DJ new product document number: 74953 s-80436-rev. b, 03-mar-08 www.vishay.com 1 dual n-channel 12-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 12 0.040 at v gs = 4.5 v 4.5 4.5 nc 0.048 at v gs = 2.5 v 4.5 0.063 at v gs = 1.8 v 4.5 s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 orderin g information: SIA912DJ-t1-ge3 (lead (p b )-free and halogen-free) marking code x x x c a x lot traceability a n d d a t e code part # code n-channel mosfet g 1 d 1 s 1 n-channel mosfet g 2 d 2 s 2 notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequat e bottom side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 4.5 a a t c = 70 c 4.5 a t a = 25 c 4.5 a, b, c t a = 70 c 4.5 a, b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 4.5 a t a = 25 c 1.6 b, c maximum power dissipation t c = 25 c p d 6.5 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 rohs compliant features ? halogen-free ? trenchfet ? power mosfet ? new thermally enhaced powerpak ? sc-70 package - small footprint area applications ? load switch for portable applications
www.vishay.com 2 document number: 74953 s-80436-rev. b, 03-mar-08 vishay siliconix SIA912DJ new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 12 v v ds temperature coefficient v ds /t j i d = 250 a 12 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.8 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 ns zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v - 1 a v ds = 12 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 4.2 a 0.033 0.040 v gs = 2.5 v, i d = 3.8 a 0.039 0.048 v gs = 1.8 v, i d = 1.6 a 0.051 0.063 forward transconductance a g fs v ds = 6 v, i d = 4.2 a 13 s dynamic b input capacitance c iss v ds = 6 v, v gs = 0 v, f = 1 mhz 400 pf output capacitance c oss 120 reverse transfer capacitance c rss 70 total gate charge q g v ds = 6 v, v gs = 8 v, i d = 5.5 a 7.5 11.5 nc v ds = 6 v, v gs = 4.5 v, i d = 5.5 a 4.5 6.8 gate-source charge q gs 0.6 gate-drain charge q gd 0.8 gate resistance r g f = 1 mhz 2.5 turn-on delay time t d(on) v dd = 6 v, r l = 1.4 i d ? 4.4 a, v gen = 4.5 v, r g = 1 510 ns rise time t r 15 25 turn-off delay time t d(off) 35 55 fall time t f 15 25 turn-on delay time t d(on) v dd = 6 v, r l = 1.6 i d ? 4.4 a, v gen = 8 v, r g = 1 510 rise time t r 10 15 turn-off delay time t d(off) 15 25 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 4.5 a pulse diode forward current i sm 20 body diode voltage v sd i s = 4.4 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 4.4 a, di/dt = 100 a/s, t j = 25 c 15 30 ns body diode reverse recovery charge q rr 820nc reverse recovery fall time t a 8.5 ns reverse recovery rise time t b 6.5
document number: 74953 s-80436-rev. b, 03-mar-08 www.vishay.com 3 vishay siliconix SIA912DJ new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 0.4 0.8 1.2 1.6 2.0 v ds - drain-to-source voltage (v) v gs = 5 thru 2.5 v - drain current (a) i d v gs = 2 v v gs = 1.5 v v gs = 1 v 0.03 0.04 0.05 0.06 0.07 0.0 8 0.09 0.10 04 8 12 16 20 i d - drain c u rrent (a) - on-resistance ( ) r ds(on) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 2 4 6 8 02468 q g - total gate charge (nc) i d = 5.5 a - gate-to-source voltage (v) v gs v ds = 9.6 v v ds = 6 v transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 t c = 25 c - drain current (a) i d t c = 125 c t c = - 55 c c rss v ds - drain-to-source voltage (v) 0 100 200 300 400 500 600 036912 c oss c iss c - capacitance (pf) t j - j u nction temperat u re (c) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance ( n ormalized) v gs = 4.5 v , 2.5 v , 1. 8 v , i d = 4.2 a
www.vishay.com 4 document number: 74953 s-80436-rev. b, 03-mar-08 vishay siliconix SIA912DJ new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0.1 1 10 t j = 25 c 100 t j - temperature (c) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) v gs - gate-to-so u rce v oltage ( v ) 0.02 0.04 0.06 0.0 8 0.10 0.12 012345 i d = 4.2 a, 25 c - on-resistance ( ) r ds(on) i d = 4.2 a, 125 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 1 ms - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse 10 ms 100 ms dc 1 s 10 s v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * 100 s b v dss limited
document number: 74953 s-80436-rev. b, 03-mar-08 www.vishay.com 5 vishay siliconix SIA912DJ new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature (c) package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
www.vishay.com 6 document number: 74953 s-80436-rev. b, 03-mar-08 vishay siliconix SIA912DJ new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74953 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
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